Beilstein J. Nanotechnol.2018,9, 2855–2882, doi:10.3762/bjnano.9.266
minimal He+ ion damage effects compared with the earlier Ga+ systems, and reduced proximity effect, are the reasons for the renewed interest in ion beam lithography in the form of scanning helium ion beam lithography or “SHIBL”. The ultimate resolution is determined by a combination of ionbeamdiameter
PDF
Figure 1:
(a) SEM image of ALIS gas field ion source, produced with permission of [24], copyright 2010 Japanese J...
Beilstein J. Nanotechnol.2017,8, 682–687, doi:10.3762/bjnano.8.73
source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.
Keywords: exposure dose; focused ion beam; freestanding 2D layer; graphene; ionbeamdiameter; ion beam point spread function
interaction with 2D materials contains information about beam profiles [14][17][18]. Here we show that it is possible to fabricate pores in graphene membranes smaller than the ionbeamdiameter by carefully tailoring the exposure dose. The pore diameters directly depend on the time for which individual pixels
PDF
Figure 1:
(a) STEM-BF image of a graphene membrane perforated with a 1.5 pA Ga-FIB. Pores diameter increases ...